Advanced power electronic devices
8-INCH DIAMOND HETEROEPITAXIAL WAFER PLATFORM
8-inch heteroepitaxial diamond wafer platform
8-inch Diamond Heteroepitaxial Wafer Platform
Using MPCVD heteroepitaxy, R&D-level 8-inch diamond wafers are grown on GaN, sapphire, SiC, and other substrates—supporting next-generation power electronics, RF devices, and semiconductor thermal management.
QS / PRODUCT PLATFORM
MPCVD
01 / PRODUCT OVERVIEW
Product definition
The 8-inch heteroepitaxial diamond wafer platform uses MPCVD (microwave plasma chemical vapor deposition) to grow heteroepitaxial diamond on non-diamond substrates, forming a materials R&D platform for large-area diamond wafers.
"Heteroepitaxy" means growing a diamond epilayer on a substrate whose crystal structure differs from diamond (as opposed to homoepitaxy—continued diamond growth on a diamond seed). Lattice matching between diamond and the substrate is achieved through nucleation/transition layer design. The platform value of this route is the potential to overcome seed-size limits on diamond wafer scaling, opening a path for diamond materials into large-wafer semiconductor supply chains.
The platform currently focuses on 8-inch R&D validation; "platform" emphasizes extensible technical capability rather than a single frozen product.
01
MPCVD growth
02 / SPECIFICATIONS
Size capability
| Stage | Size | Notes |
|---|---|---|
| Sample / R&D stage | 8 inch (200 mm) | R&D-grade heteroepitaxial diamond wafers of this size have been made. They are not yet in engineering qualification or volume production. |
03 / DETAIL
Substrate materials and epitaxy capability
| Substrate | English | Notes |
|---|---|---|
| Gallium nitride | GaN | Supports heteroepitaxial diamond growth |
| Sapphire | Sapphire (Al₂O₃) | Supports heteroepitaxial diamond growth |
| Silicon carbide | SiC | Supports heteroepitaxial diamond growth |
04 / TECHNICAL HIGHLIGHTS
Wafer parameters
8 inch (200 mm)
Wafer Size
Gallium nitride, sapphire, and silicon carbide
Substrate
Available on request
Epitaxial layer thickness
Available on request
Thickness uniformity / TTV
| Item | Value | Notes |
|---|---|---|
| Wafer Size | 8 inch (200 mm) | Size at the current sample / R&D stage |
| Substrate | Gallium nitride, sapphire, and silicon carbide | All three substrates support heteroepitaxial diamond growth |
| Epitaxial layer thickness | Available on request | Thickness varies widely with the application and process. Published industry figures run from tens of nm to about 300 μm. This is not a fixed company specification. |
| Thickness uniformity / TTV | Available on request | Measured values for this product are available on request |
| Bow / Warp | Available on request | Measured values for this product are available on request |
| Surface roughness | Available on request | Measured values for this product are available on request |
| Crystal quality / defect metrics | Available on request | Measured values for this product are available on request. This metric varies strongly with substrate and process, so an industry average is not used in its place. |
| Thermal conductivity | Available on request | Measured thermal conductivity of a thin heteroepitaxial diamond layer is usually below the theoretical value for homoepitaxial single-crystal diamond, and it changes with crystal quality and thickness. The measured data controls. |
| Crystal orientation | Available on request | Published heteroepitaxy work commonly reports (100), (111), and similar orientations. The actual orientation is confirmed by the process and the orientation measurement. |
05 / PROCESSING CAPABILITY
Process / technical capability
STEP 01
MPCVD (microwave plasma chemical vapor deposition) heteroepitaxial diamond growth technology
STEP 02
Process R&D capability for heteroepitaxial diamond growth on GaN, sapphire, SiC, and other substrate materials
STEP 03
Wafer-level heteroepitaxial preparation capability at 8-inch (sample/R&D stage)
06 / APPLICATIONS
Target application directions
This product is currently at sample/R&D stage; the following are target application directions for this technology route, not yet commercialized application cases:
RF devices
High-power devices
Semiconductor thermal management
07 / QUALITY & VALIDATION
Inspection documentation
Related inspection reports available on request from the company.
For current R&D data or later test progress, request via "Technical inquiry"; R&D/Quality will assess under disclosure policy.
08 / DETAIL
Technical documentation / customization direction
Current stage: sample / R&D; customized R&D collaboration on substrate selection, epilayer thickness direction, and related topics can be discussed
Customization directions: substrate material selection (GaN / sapphire / SiC), target application alignment, joint R&D, etc.—subject to available R&D resources and commercial terms