Ultra-high thermal conductivity: system-equivalent thermal conductivity of 1200–2000 W/(m·K), significantly higher than conventional Cu-Mo (CMC), Cu-W (CPC), and other metal-matrix heat-spreading materials (typically in the 150–300 W/(m·K) range).
Aluminum-Metallized Single-Crystal Diamond
A thermally conductive, electrically insulating material with a single-crystal diamond core and an aluminum layer bonded to the surface, combining ultra-high thermal conductivity, electrical isolation, and light weight.
Product overview
Aluminum-metallized single-crystal diamond uses single-crystal diamond as the primary heat conductor. Through surface metallization bonding, an aluminum metal layer is joined to the diamond surface, forming a "core + cladding" layered structure—the same structural principle as copper-metallized single-crystal diamond, differing only in the surface metal.
This structure is fundamentally different from particle-dispersed diamond–metal composites (isotropic, homogeneous materials in which diamond micropowder is dispersed throughout a metal matrix, such as diamond–copper and diamond–aluminum composites): those are conductive throughout, whereas aluminum-metallized single-crystal diamond uses the single-crystal diamond body as an insulating core with a conductive metal interface only at the surface—two technical routes with different structures and performance.
This structure combines diamond’s intrinsic ultra-high thermal conductivity and electrical insulation with an aluminum layer that is lightweight, machinable, and relatively cost-controllable—especially suited to heat-spreading applications with tighter system-weight or overall-cost requirements.
Key advantages
High thermal diffusivity: thermal diffusivity 9.0–9.5 cm²/s for fast thermal response under high-heat-flux transient conditions.
Integrated thermal conduction and electrical isolation: the diamond core is intrinsically insulating (volume resistivity 2.95×10¹³ Ω·cm); the aluminum layer is conductive and machinable—delivering "high thermal conductivity + electrical isolation" in one stack, unlike bulk-conductive particle-dispersed diamond–metal composites.
Low and stable CTE: thermal expansion coefficient 3.1962×10⁻⁶/K over RT–700°C, with low thermal-mismatch risk versus semiconductor devices.
Lightweight: aluminum is about 30% as dense as copper (about 2.70 g/cm³ vs. about 8.96 g/cm³ for copper), so at the same structural dimensions an aluminum-metallized part is significantly lighter than a copper-metallized one—suited to weight-sensitive automotive, airborne, and portable equipment.
Technical parameters
| Item | Unit | Spec |
|---|---|---|
| Morphology | — | Square/rectangular substrates (aligned with the single-crystal diamond product line) |
| Standard sizes | mm | 7×7, 8×8, 10×12, 11×13, 13×15, 15×15, 25×25 (same standard sizes as copper-metallized single-crystal diamond) |
| Thickness | μm | 300–5000 (i.e., 0.3–5 mm); special requirements customizable |
| bulk density | g/cm | 3.51–3.52 |
Product specifications
Standard sizes
Standard sizes: square/rectangular substrates 7×7 mm, 8×8 mm, 10×12 mm, 11×13 mm, 13×15 mm, 15×15 mm, 25×25 mm
Thickness range: 0.3–5 mm (300–5000 μm); special requirements customizable
Customizable: substrate morphology, size, thickness, patterning / via drilling
Metallization and surface options: aluminum metallization as the base structure; specific surface finishing / plating schemes available on request
Application fields
Lasers
Microwave power devices
High-power semiconductor lighting
Cooling for high-power IC chip packages
Heat-spreading applications with explicit system-weight requirements, such as automotive, airborne, and portable equipment
Inspection and documentation
Related inspection reports available on request from the company.