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SINGLE CRYSTAL DIAMOND

single-crystal diamond

Single Crystal Diamond

MPCVD-grown single-crystal diamond in standard plate sizes from 7×7 mm to 25×25 mm, for high-performance electronics and functional materials. A materials platform for heat spreading in high-heat-flux devices and for advanced device R&D and validation.

1800–2200 W/(m·K) · material reference value0.3–5 mm
single-crystal diamond
QS / PRODUCT PLATFORM MPCVD

01 / PRODUCT OVERVIEW

Product overview

Single-crystal diamond is grown by MPCVD (microwave plasma chemical vapor deposition) as a functionally uniform diamond material with a single crystal orientation—distinct from particle-dispersed or polycrystalline structures.

The product is currently offered primarily as plates (square/rectangular, millimeter-scale), with circular (wafer-like) forms also available. It can be used as a standalone high-performance functional substrate, or as a base material for subsequent metallization, packaging, or device integration (for example, copper- or aluminum-metallized diamond composite products use single-crystal diamond as the core crystal).

01
MPCVD growth
02
single-crystal diamond
03
Precision machining
04
Metallization / packaging
05
Device applications
02 / MATERIAL CHARACTERISTICS

Crystal characteristics

single-crystal diamond
ultra-high thermal conductivity
Thermal conductivity up to 1800–2200 W/(m·K)
low thermal expansion
Extremely low CTE
High hardness
Mohs hardness 10
chemical stability
Excellent chemical stability
Single-crystal structure
No grain boundaries; thermal, electrical, and mechanical consistency better than polycrystalline materials
03 / SPECIFICATIONS

Crystal orientation / form / size / thickness

Standard plate sizes

7×7mm
8×8mm
10×12mm
11×13mm
13×15mm
15×15mm
25×25mm
THICKNESS
0.3–5mm
ItemSpecificationNotes
Crystal orientation (polished face)Available on requestDiamond is cubic. Common orientations are (100), (110) and (111); the exact orientation and off-angle are confirmed by measurement.
FormPlate (square or rectangular, the main form); round wafer is a smaller sharePlate is the current main supply form
Standard plate sizes7×7mm, 8×8mm, 10×12mm, 11×13mm, 13×15mm, 15×15mm, 25×25mmStandard size series; other sizes are available on request
Round (wafer) sizesAvailable on requestSpecific sizes can be confirmed through a technical inquiry
Thickness0.3–5mmStandard thickness range for plates
04 / TECHNICAL HIGHLIGHTS

Material parameters

1800–2200
W/(m·K)
Thermal conductivity
1.0–1.5
10⁻⁶/K
Thermal expansion coefficient
3.51–3.52
g/cm³
Density
10
—
Mohs hardness
ItemUnitValueNotes
Thermal conductivityW/(m·K)1800–2200Reference value for high-quality CVD single-crystal diamond; the lot inspection report governs
Thermal expansion coefficient10⁻⁶/K1.0–1.5Reference value for CVD single-crystal diamond
Densityg/cm³3.51–3.52Physical constant of diamond
Mohs hardness—10Intrinsic property of diamond
Tensile strengthMPaAvailable on requestNo product-specific confirmed value yet; do not reuse copper-clad sheet figures
Young's modulusGPa900–1100 (industry reference)Published industry reference range
Dielectric constant / dielectric loss—Available on requestProduct-specific test figures are available on request
Volume resistivityΩ·cm>10¹⁴ (industry reference)Published industry reference range
Surface roughness (front/back Ra)nmFront Ra ≤1.16 (measured on a sample)Historical third-party reference from a February 2025 15×15 mm plate lot, not a fixed spec for current lots
Warp / flatnessμmSa ≈0.56 (historical reference)Historical third-party reference from a February 2025 15×15 mm plate lot, not a fixed spec for current lots; see the inspection file
Optical transmittance / refractive index—Not applicableOptical-grade figures are on the Diamond Optical Window product
05 / PROCESSING CAPABILITY

Processing capability

STEP 01

Custom crystal morphology, form (plate/circular), size, and thickness supported; processing scope confirmed against capacity and requirements.

STEP 02

Polishing, cutting, and other secondary processing available; process and accuracy metrics can be further confirmed to customer requirements.

STEP 03

For specific crystal orientation, purity grade, or surface finishing, submit requirements via technical inquiry for R&D feasibility assessment.

06 / APPLICATIONS

Application fields

High-heat-flux heat spreading and cooling validation (power semiconductors, RF/microwave devices, and related directions)

High-performance device validation and frontier R&D (ultra-wide-bandgap semiconductors, thermal-management materials, optoelectronic materials, and related directions)

Base materials platform for materials evaluation, process development, and prototype validation

Core crystal feedstock for subsequent metallization/packaging products (e.g., copper- or aluminum-metallized diamond)

07 / QUALITY & VALIDATION

Inspection documentation

In February 2025, our technology partner commissioned the Shenzhen Institutes of Advanced Technology (SIAT), Chinese Academy of Sciences, to perform third-party testing on a 15×15 mm plate single-crystal diamond sample. The tests covered wafer-level surface roughness and bow: front-side Ra = 0.7774–1.158 nm, back-side Ra = 22.096 nm, bow Sa = 0.5628 μm. The conclusion was "qualified, meeting wafer-level criteria (under the international convention that Ra < 3 nm is considered wafer-level)."

This data is from early-2025 sample submissions and does not fully correspond to current equipment and process lots; it is historical process-capability reference only and does not represent fixed outgoing parameters for current lots.

For latest inspection data or lot-specific reports, request via "Technical inquiry"; Quality will confirm and provide as appropriate.

CONTACT

Technical inquiry

Standard specs: plates 7×7 mm, 8×8 mm, 10×12 mm, 11×13 mm, 13×15 mm, 15×15 mm, 25×25 mm, thickness 0.3–5 mm; circular (wafer-like) sizes available on request

Customization: crystal orientation, form (plate/circular), surface finishing, purity grade, non-standard size and thickness—all available on request